27 citations · 43 across the 9 of their papers we have counts for
9 papers
Spectroscopic signatures of native charge compensation in Mg doped GaN Nanorods
Rajendra Kumar, Sanjay Nayak, S. M. Shivaprasad
We study the native charge compensation effect in Mg doped GaN nanorods (NRs), grown by Plasma Assisted Molecular Beam Epitaxy (PAMBE), using Raman, photoluminescence (PL) and X-ra…
Morphology dependent surface properties of nanostructured GaN films grown by molecular beam epitaxy
Abhijit Chatterjee, S. P. Swathi, S. M. Shivaprasad
The effect of film morphology on its surface chemistry and band structure has been analyzed for gallium nitride epitaxial films grown by molecular beam epitaxy. The film morphology…
Vacancy defect in bulk and at (100) surface of GaN: A combined first-principles theoretical and experimental analysis
Sanjay Nayak, Mit H. Naik, Manish Jain +2
We determine atomic and electronic structure, formation energy, stability and magnetic properties of native point defects, such as Gallium (Ga) and Nitrogen (N) vacancies in bulk a…
Enhanced radial growth of Mg doped GaN nanorods: A combined experiment and first-principles based analysis
Sanjay Nayak, Rajendra Kumar, Nagaraja KK +1
We discuss the microstructural origin of enhanced radial growth in magnesium (Mg) doped gallium nitride (GaN) nanorods (NRs) using electron microscopy and \textit{first-principles}…
On the origin of Blue Luminescence in Mg doped GaN
Sanjay Nayak, Mukul Gupta, Umesh V. Waghmare +1
We uncover the origin of blue luminescence (BL) peak in Mg doped GaN thin film using a combination of experimental X-ray absorption near edge spectroscopy (XANES), first-principles…
Edge enhanced growth induced shape transition in the formation of GaN Nanowall Network
Sanjay Nayak, Rajendra Kumar, S. M. Shivaprasad
We address the mechanism of early stages of growth and shape transition of the unique nanowall network (NwN) nanostructure of GaN by experimentally monitoring its controlled growth…
GaN Nanowall Network: A new possible route to obtain efficient p-GaN and enhanced light extraction
Sanjay Kumar Nayak, Mukul Gupta, S. M. Shivaprasad
We demonstrate that GaN formed in a Nanowall Network (NwN) morphology can overcome fundamental limitations in optoelectronic devices, and enable high light extraction and effective…
Quantum coherence of electrons in random networks of c-axis oriented wedge-shaped GaN nanowalls grown by molecular beam epitaxy
H. P. Bhasker, Varun Thakur, S. M. Shivaprasad +1
The depth distribution of the transport properties as well as the temperature dependence of the low field magneto-conductance for several c-axis oriented GaN nanowall network sampl…
Two dimensional confinement of electrons in nanowall network of GaN leading to high mobility and phase coherence
H. P. Bhasker, Varun Thakur, S. M. Shivaprasad +1
Here, we report an alternative route to achieve two dimensional electron gas (2DEG) in a semiconductor structure. It has been shown that charge accumulation on the side facets can…