2 papers
cond-mat.mtrl-sci2020
Can surface-transfer doping and UV irradiation during annealing improve shallow implanted Nitrogen-Vacancy centers in diamond?
N. J. Glaser, G. Braunbeck, O. Bienek +2
It has been reported that conversion yield and coherence time of ion-implanted NV centers improve if the Fermi level is raised or lowered during the annealing step following implan…
cond-mat.mes-hall2018
Can ultraprecision polishing techniques improve the coherence times of nitrogen-vacancy centers in diamond?
G. Braunbeck, S. Mandal, M. Touge +2
We investigate the correlation between surface roughness and corresponding times of nearsurface nitrogen-vacancy centers (~7 nm/ 5 keV implantation energy) in diamond. For th…