A Comparison of Electronic, Dielectric, and Thermoelectric Properties of Monolayer of HfX2N4(X = Si, Ge) through First-Principles Calculations

Chayan Das, Abhishek, Dibyajyoti Saikia +2

The newly emerged two-dimensional (2D) materials family of MSi2N4, where M is a transition metal atom (i.e., Mo, W, etc.), has the potential to be named after the conventional and…