2 papers
cond-mat.mes-hall2018
Long-term drift of Si-MOS quantum dots with intentional donor implants
Martin Rudolph, Bahman Sarabi, Roy Murray +2
Charge noise can be detrimental to the operation of quantum dot (QD) based semiconductor qubits. We study the low-frequency charge noise by charge offset drift measurements for Si-…
cond-mat.mtrl-sci2017
Quantifying Atom-scale Dopant Movement and Electrical Activation in Si:P Monolayers
Xiqiao Wang, Joseph A. Hagmann, Pradeep Namboodiri +8
Advanced hydrogen lithography techniques and low-temperature epitaxial overgrowth enable patterning of highly phosphorus-doped silicon (Si:P) monolayers (ML) with atomic precision.…