activity
20182022
most citedAn envelope function formalism for lattice-matched heterostructures

6 citations · 6 across the 2 of their papers we have counts for

collaborators

8 papers

cond-mat.mes-hall2022

Atomistic modeling of spin and electron dynamics in two-dimensional magnets switched by two-dimensional topological insulators

Sabyasachi Tiwari, Maarten L. Van de Put, Kristiaan Temst +2

To design fast memory devices, we need material combinations which can facilitate fast read and write operation. We present a heterostructure comprising a two-dimensional (2D) magn…

cond-mat.mtrl-sci2021

Computing Curie temperature of two-dimensional ferromagnets in the presence of exchange anisotropy

Sabyasachi Tiwari, Joren Vanherck, Maarten L. Van de Put +2

We compare three first-principles methods of calculating the Curie temperature in two-dimensional (2D) ferromagnetic materials (FM), modeled using the Heisenberg model, and propose…

cond-mat.supr-con2021

New polymorphic phase and rich phase diagram in the PdSe2-xTex system

Wenhao Liu, Mehrdad Rostami Osanloo, Xiqu Wang +6

We report a combined experimental and theoretical study of the PdSe2-xTex system. With increasing Te fraction, structural evolutions, first from an orthorhombic phase (space group…

cond-mat.mes-hall2020

Monte Carlo analysis of phosphorene nanotransistors

Gautam Gaddemane, Maarten L. Van de Put, William G. Vandenberghe +2

Experimental studies on two-dimensional (2D) materials are still in the early stages, and most of the theoretical studies performed to screen these materials are limited to the roo…

cond-mat.mes-hall2020

Critical behavior of ferromagnets CrI3, CrBr3, CrGeTe3, and anti-ferromagnet FeCl2: a detailed first-principles study

Sabyasachi Tiwari, Maarten L Van de Put, Bart Soree +1

We calculate the Curie temperature of layered ferromagnets, chromium tri-iodide (CrI3), chromium tri-bromide (CrBr3), chromium germanium tri-telluride (CrGeTe3), and the Neel tempe…

cond-mat.mes-hall2019

Scalable Atomistic Simulations of Quantum Electron Transport using Empirical Pseudopotentials

Maarten L. Van de Put, Massimo V. Fischetti, William G. Vandenberghe

The simulation of charge transport in ultra-scaled electronic devices requires the knowledge of the atomic configuration and the associated potential. Such "atomistic" device simul…