87 citations · 186 across the 4 of their papers we have counts for
4 papers
Determination of Carrier Polarity in Fowler-Nordheim Tunneling and Evidence of Fermi Level Pinning at the Hexagonal Boron Nitride / Metal Interface
Yoshiaki Hattori, Takashi Taniguchi, Kenji Watanabe +1
Hexagonal boron nitride (h-BN) is an important insulating substrate for two-dimensional (2D) heterostructure devices and possesses high dielectric strength comparable to SiO2. Here…
Impact ionization and transport properties of hexagonal boron nitride in constant-voltage measurement
Y. Hattori, T. Taniguchi, K. Watanabe +1
The electrical evaluation of the crystallinity of hexagonal boron nitride (h-BN) is still limited to the measurement of dielectric breakdown strength, in spite of its importance as…
Comparison of device structures for the dielectric breakdown measurement of hexagonal boron nitride
Yoshiaki Hattori, Takashi Taniguchi, Kenji Watanabe +1
Improving the film quality in the synthesis of large-area hexagonal boron nitride films (h-BN) for two-dimensional material devices remains a great challenge. The measurement of el…
Anisotropic Dielectric Breakdown Strength of Single Crystal Hexagonal Boron Nitride
Yoshiaki Hattori, Takashi Taniguchi, Kenji Watanabe +1
Dielectric breakdown has historically been of great interest from the perspectives of fundamental physics and electrical reliability. However, to date, the anisotropy in the dielec…