activity
20182022
most citedIon implantation in \b{eta}-Ga2O3: physics and technology

84 citations · 84 across the 4 of their papers we have counts for

collaborators

5 papers

physics.comp-ph2022

Response to "Comment on 'A novel two-dimensional boron-carbon-nitride (BCN) monolayer: A first-principles insight [J. Appl. Phys. 2021, 130, 114301]'"

Asadollah Bafekry, Mosayeb Naseri, Mohamed M. Fadlallah +5

Recently, reported a comments on the our paper [JAP21-AR-03574R].. For clarification, we applied the fingerprint theory to examine the similarity between the distinct structures. T…

cond-mat.mtrl-sci2021★ 84 cited

Ion implantation in \b{eta}-Ga2O3: physics and technology

Alena Nikolskaya, Evgenia Okulich, Dmitry Korolev +12

Gallium oxide and in particular its thermodynamically stable \b{eta}-Ga2O3 phase is within the most exciting materials in research and technology nowadays due to its unique propert…

cond-mat.mtrl-sci2020

MoSi2N4 single-layer: a novel two-dimensional material with outstanding mechanical, thermal, electronic, optical, and photocatalytic properties

A. Bafekry, M. Faraji, Do M. Hoat +5

Very recently, the two-dimensional (2D) form of MoSi2N4 has been successfully fabricated [Hong et al., Sci. 369, 670 (2020)]. Motivated by theses recent experimental results, herei…

cond-mat.mtrl-sci2020

High electron mobility single-crystalline ZnSnN2 on ZnO (0001) substrates

D. Gogova, V. S. Olsen, C. Bazioti +4

Making a systematic effort, we have developed a single-crystalline ZnSnN2 on ZnO (0001) by reactive magnetron co-sputtering. Epitaxial growth was achieved at 350 C by co-sputtering…

cond-mat.mtrl-sci2018

Band alignments of electronic energy structure in epitaxially grown \b{eta}-Ga2O3 layers

D. A. Zatsepin, D. W. Boukhvalov, A. F. Zatsepin +4

Gallium oxide epitaxial layers grown on native substrates and basal plane sapphire were characherized by X-ray phtotelectron and optical reflectance spectroscopies. The XPS electro…