Etching-to-deposition transition in SiO${}_2$/Si${}_3$N${}_4$ using CH${}_x$F${}_y$ ion-based plasma etching: An atomistic study with neural network potentials

Hyungmin An, Sangmin Oh, Dongheon Lee +4

Plasma etching, a critical process in semiconductor fabrication, utilizes hydrofluorocarbons both as etchants and as precursors for carbon film formation, where precise control ove…