Sangmin Oh

collaborators

2 papers

cond-mat.mtrl-sci2025

Etching-to-deposition transition in SiO $_{2}$ /Si $_{3}$ N $_{4}$ using CH $_{x}$ F $_{y}$ ion-based plasma etching: An atomistic study with neural network potentials

Hyungmin An, Sangmin Oh, Dongheon Lee +4

Plasma etching, a critical process in semiconductor fabrication, utilizes hydrofluorocarbons both as etchants and as precursors for carbon film formation, where precise control ove…

cond-mat.mtrl-sci2025

An efficient forgetting-aware fine-tuning framework for pretrained universal machine-learning interatomic potentials

Jisu Kim, Jiho Lee, Sangmin Oh +5

Pretrained universal machine-learning interatomic potentials (MLIPs) have revolutionized computational materials science by enabling rapid atomistic simulations as efficient altern…

Etching-to-deposition transition in SiO2​/Si3​N4​ using CHx​Fy​ ion-based plasma etching: An atomistic study with neural network potentials

An efficient forgetting-aware fine-tuning framework for pretrained universal machine-learning interatomic potentials

Etching-to-deposition transition in SiO $_{2}$ /Si $_{3}$ N $_{4}$ using CH $_{x}$ F $_{y}$ ion-based plasma etching: An atomistic study with neural network potentials