13 citations · 34 across the 7 of their papers we have counts for
7 papers
Effect of Zeeman splitting on magnetoresistivity of 2D hole gas in a Ge_{1-x}Si_x/Ge/Ge_{1-x}Si_x quantum well
Yu. G. Arapov, V. N. Neverov, G. I. Harus +5
For a two-dimensional (2D) hole system (confined within Ge layers of a multilayered p-Ge/Ge_{1-x}Si_x heterostructure) described by Luttinger Hamiltonian with the g-factor highly a…
Parallel magnetic field induced magnetoresistance peculiarities of the double quantum well filled with electrons or holes
M. V. Yakunin, G. A. Alshanskii, Yu. G. Arapov +8
In In_xGa_{1-x}As/n-GaAs double quantum wells (DQWs) containing an electron gas, the magnetoresistance (MR) peculiarities under parallel magnetic fields caused by the passing of th…
Parabolic negative magnetoresistance in p-Ge/Ge1-xSix heterostructures
Yu. G. Arapov, G. I. Harus, O. A. Kuznetsov +2
Quantum corrections to the conductivity due to the weak localization (WL) and the disorder-modified electron-electron interaction (EEI) are investigated for the high-mobility multi…
The key role of smooth impurity potential in formation of hole spectrum for p-Ge/Ge_{1-x}Si_x heterostructures in the quantum Hall regime
Yu. G. Arapov, G. A. Alshanskii, G. I. Harus +4
We have measured the temperature (0.1 <= T <= 15 K) and magnetic field (0 <= B <= 12 T) dependences of longitudinal and Hall resistivities for the p-Ge_0.93Si_0.07/Ge multilayers w…
Parallel magnetic field induced strong negative magnetoresistance in a wide p-Ge_{1-x}Si_x/Ge/p-Ge_{1-x}Si_x quantum well
M. V. Yakunin, G. A. Alshanskii, Yu. G. Arapov +2
A negative magnetoresistance under the in-plane magnetic field, reaching maximum 30-40% of its zero-field value in fields higher than ~12 T, has been found in wide Ge_{1-x}Si_x/Ge/…
Probing the p-Ge_{1-x}Si_x/Ge/p-Ge_{1-x}Si_x quantum well by means of the quantum Hall effect
M. V. Yakunin, G. A. Alshanskii, Yu. G. Arapov +4
We have measured the temperature (0.1 < T < 15 K) and magnetic field (0 < B < 32 T) dependences of longitudinal and Hall resistivities for the p-Ge_{1-x}Si_x/Ge, x=~0.07, multilaye…