4 papers · 1 filter
Transport properties of 2D-electron gas in a n-InGaAs/GaAs DQW in a vicinity of low magnetic-field-induced Hall insulator--quantum Hall liquid transition
Yu. G. Arapov, S. V. Gudina, G. I. Harus +6
The resistivity (R) of low mobility dilute 2D-electron gas in a n-InGaAs/GaAs double quantum well (DQW) exhibits the monotonic 'insulating-like' temperature dependence (dR/dT < 0)…
Effect of Zeeman splitting on magnetoresistivity of 2D hole gas in a Ge_{1-x}Si_x/Ge/Ge_{1-x}Si_x quantum well
Yu. G. Arapov, V. N. Neverov, G. I. Harus +5
For a two-dimensional (2D) hole system (confined within Ge layers of a multilayered p-Ge/Ge_{1-x}Si_x heterostructure) described by Luttinger Hamiltonian with the g-factor highly a…
Parallel magnetic field induced magnetoresistance peculiarities of the double quantum well filled with electrons or holes
M. V. Yakunin, G. A. Alshanskii, Yu. G. Arapov +8
In In_xGa_{1-x}As/n-GaAs double quantum wells (DQWs) containing an electron gas, the magnetoresistance (MR) peculiarities under parallel magnetic fields caused by the passing of th…
Localization and electron-electron interaction effects in magnetoresistance of p-type Ge/Ge_{1-x}Si_x heterostructures
Yu. G. Arapov, G. I. Harus, V. N. Neverov +3
We report on the results of investigation the conductivity and magnetoresistance (MR) temperature dependencies for the two strained multilayer p-type Ge/Ge_{1-x}Si_x heterostructur…