22 citations · 107 across the 17 of their papers we have counts for
17 papers
Intrinsic Josephson junction characteristics of Nd2-xCexCuO4/SrTiO3 epitaxial films
T. B. Charikova, D. I. Devyaterikov, V. N. Neverov +3
The current-voltage (I-V) properties along the c axis on Nd2-xCexCuO4 /SrTiO3 epitaxial films with x = 0.145, 0.15 were investigated. For all the samples it has been established th…
Determination of the magnetocaloric effect from thermophysical parameters and their relationships near magnetic phase transition in doped manganites
A. G. Gamzatov, A. B. Batdalov, A. M. Aliev +8
We present the results of a comparative analysis of the magnetocaloric effect (MCE) in Pr0.7Sr0.2Ca0.1MnO3, through direct and indirect measurements, using experimentally measured…
Unconventional Reentrant Quantum Hall Effect in a HgTe/CdHgTe Double Quantum Well
M. V. Yakunin, S. S. Krishtopenko, S. M. Podgornykh +7
We report on observation of an unconventional structure of the quantum Hall effect (QHE) in a -type HgTe/CdHgTe double quantum well (DQW) consisting of two HgTe lay…
Effect of exchange electron-electron interaction on conductivity of InGaAs single and double quantum wells in ballistic regime
S. V. Gudina, Yu. G. Arapov, V. N. Neverov +4
We report an experimental study of quantum conductivity corrections for two-dimensional electron gas in a GaAs/InGaAs/GaAs single and double quantum wells in a wide temperature ran…
Large-scale impurity potential in the quantum Hall effect for the HgTe quantum well with inverted band structure
S. V. Gudina, Yu. G. Arapov, V. N. Neverov +8
We report on the longitudinal and Hall resistivities of a HgTe quantum well with inverted energy spectrum (dQW = 20.3 nm) measured in the quantum Hall (QH) regime at magnetic field…
Doping effect on the evolution of the pairing symmetry in n-type superconductor near antiferromagnetic phase boundary
T. B. Charikova, N. G. Shelushinina, G. I. Harus +4
We present the investigation results of the in-plane \{rho}(T) resistivity tensor at the temperature range 0.4-40 K in magnetic fields up to 90kOe (H||c, J||ab) for electron-doped…