13 citations · 27 across the 10 of their papers we have counts for
10 papers
Two parameter scaling of conductance in quantum Hall effect
Yurii G. Arapov, Svetlana V. Gudina, Vladimir N. Neverov +2
After a brief survey of theoretical concepts for the two-parameter scaling theory in the integer quantum Hall effect regime, a comprehensive set of early, recent and new experiment…
Effect of exchange electron-electron interaction on conductivity of InGaAs single and double quantum wells in ballistic regime
S. V. Gudina, Yu. G. Arapov, V. N. Neverov +4
We report an experimental study of quantum conductivity corrections for two-dimensional electron gas in a GaAs/InGaAs/GaAs single and double quantum wells in a wide temperature ran…
Transport properties of 2D-electron gas in a n-InGaAs/GaAs DQW in a vicinity of low magnetic-field-induced Hall insulator--quantum Hall liquid transition
Yu. G. Arapov, S. V. Gudina, G. I. Harus +6
The resistivity (R) of low mobility dilute 2D-electron gas in a n-InGaAs/GaAs double quantum well (DQW) exhibits the monotonic 'insulating-like' temperature dependence (dR/dT < 0)…
Effect of Zeeman splitting on magnetoresistivity of 2D hole gas in a Ge_{1-x}Si_x/Ge/Ge_{1-x}Si_x quantum well
Yu. G. Arapov, V. N. Neverov, G. I. Harus +5
For a two-dimensional (2D) hole system (confined within Ge layers of a multilayered p-Ge/Ge_{1-x}Si_x heterostructure) described by Luttinger Hamiltonian with the g-factor highly a…
Parallel magnetic field induced magnetoresistance peculiarities of the double quantum well filled with electrons or holes
M. V. Yakunin, G. A. Alshanskii, Yu. G. Arapov +8
In In_xGa_{1-x}As/n-GaAs double quantum wells (DQWs) containing an electron gas, the magnetoresistance (MR) peculiarities under parallel magnetic fields caused by the passing of th…
Localization and electron-electron interaction effects in magnetoresistance of p-type Ge/Ge_{1-x}Si_x heterostructures
Yu. G. Arapov, G. I. Harus, V. N. Neverov +3
We report on the results of investigation the conductivity and magnetoresistance (MR) temperature dependencies for the two strained multilayer p-type Ge/Ge_{1-x}Si_x heterostructur…