$\hat{I}{¼}_{2T}(n)$: A Method for Extracting the Density Dependent Mobility in Two-Terminal Nanodevices

Christian E. N. Petersen, Damon J. Carrad, Thierry Désiré +6

Measuring carrier mobility as a function of the carrier density in semiconductors using Hall effect is the gold standard for quantifying scattering mechanisms. However, for nanostr…