4 citations · 11 across the 3 of their papers we have counts for
3 papers
cond-mat.mes-hall2022★ 4 cited
Fabrication and characterization of InSb nanosheet/hBN/graphite heterostructure devices
Li Zhang, Yuanjie Chen, Dong Pan +3
Semiconductor InSb nanosheet/hexagonal boron nitride (hBN)/graphite trilayers are fabricated, and single- and double-gate devices made from the trilayers are realized and character…
cond-mat.mes-hall2022★ 3 cited
Electrically tunable spin-orbit interaction in an InAs nanosheet
Furong Fan, Yuanjie Chen, Dong Pan +2
We report on an experimental study of the spin-orbit interaction (SOI) in an epitaxially grown free-standing InAs nanosheet in a dual-gate field-effect device. Gate-transfer charac…
cond-mat.mes-hall2022★ 4 cited
Quantum oscillations in a hexagonal boron nitride-supported single crystalline InSb nanosheet
Li Zhang, Dong Pan, Yuanjie Chen +2
A gated Hall-bar device is made from an epitaxially grown, free-standing InSb nanosheet on a hexagonal boron nitride (hBN) dielectric/graphite gate structure and the electron trans…