3 papers
cs.ET2025
Millisecond-scale Volatile Memory in HZO Ferroelectric Capacitors for Bio-inspired Temporal Computing
Luca Fehlings, Thomas Mikolajick, Beatriz Noheda +1
With the broad recent research on ferroelectric hafnium oxide for non-volatile memory technology, depolarization effects in HfO2-based ferroelectric devices gained a lot of interes…
cond-mat.mtrl-sci2025
Peak splitting and bias fields in ferroelectric hafnia mediated by interface charge effects
Moritz Engl, Wassim Hamouda, Ines Häusler +5
The pristine state of hafnium based ferroelectric devices exhibits various unwanted properties, such as imprint and peak splitting, which diminish with bipolar cycling. The incorpo…
cond-mat.mtrl-sci2024
Long-term stability and oxidation of ferroelectric AlScN devices: An operando HAXPES study
Oliver Rehm, Lutz Baumgarten, Roberto Guido +6
Aluminum scandium nitride (AlScN) is a promising material for ferroelectric devices due to its large remanent polarization, scalability, and compatibility with semicond…