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19982026
most citedObservation of Bound Surface States in Grain Boundary Junctions of High Temperature Superconductors

123 citations · 1.3k across the 55 of their papers we have counts for

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Showing 2019 · physics.app-phShow all

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physics.app-ph2019★ 8 cited

On the Angular Dependence of InP High Electron Mobility Transistors for Cryogenic Low Noise Amplifiers in a Magnetic Field

Isabel Harrysson Rodrigues, David Niepce, Arsalan Pourkabirian +4

The InGaAs-InAlAs-InP high electron mobility transistor (InP HEMT) is the preferred active device used in a cryogenic low noise amplifier (LNA) for sensitive detection of microwave…