activity
20042022
most citedDipole formation at metal/PTCDA interfaces: Role of the Charge Neutrality Level

220 citations · 720 across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mes-hall2022★ 63 cited

Spectroscopic evidence of flat bands in breathing kagome semiconductor Nb3I8

Sabin Regmi, Tharindu Fernando, Yuzhou Zhao +10

Kagome materials have become solid grounds to study the interplay among geometry, topology, correlation, and magnetism. Recently, semiconductors Nb3X8(X = Cl, Br, I) have been pred…

cond-mat.mtrl-sci2017★ 55 cited

Submolecular resolution by variation of IETS amplitude and its relation to AFM/STM signal

Bruno de la Torre, Martin Švec, Giuseppe Foti +8

Here we show scanning tunnelling microscopy (STM), non-contact atomic force microscopy (AFM) and inelastic electron tunnelling spectroscopy (IETS) measurements on organic molecule…

cond-mat.mes-hall2011★ 205 cited

Highly Conducting pi-Conjugated Molecular Junctions Covalently Bonded to Gold Electrodes

Wenbo Chen, Jonathan R. Widawsky, Héctor Vázquez +4

We measure electronic conductance through single conjugated molecules bonded to Au metal electrodes with direct Au-C covalent bonds using the scanning tunneling microscope based br…

cond-mat.mtrl-sci2004★ 220 cited

Dipole formation at metal/PTCDA interfaces: Role of the Charge Neutrality Level

H. Vazquez, R. Oszwaldowski, P. Pou +4

The formation of a metal/PTCDA (3, 4, 9, 10-perylenetetracarboxylic dianhydride) interface barrier is analyzed using weak-chemisorption theory. The electronic structure of the unco…

cond-mat.mtrl-sci2004★ 177 cited

Barrier formation at metal/organic interfaces: dipole formation and the Charge Neutrality Level

H. Vazquez, F. Flores, R. Oszwaldowski +3

The barrier formation for metal/organic semiconductor interfaces is analyzed within the Induced Density of Interface States (IDIS) model. Using weak chemisorption theory, we calcul…