24 citations · 36 across the 13 of their papers we have counts for
6 papers · 1 filter
Wafer-scale Semiconductor Grafting: Enabling High-Performance, Lattice-Mismatched Heterojunctions
Jie Zhou, Qiming Zhang, Jiarui Gong +14
Semiconductor heterojunctions are foundational to many advanced electronic and optoelectronic devices. However, achieving high-quality, lattice-mismatched interfaces remains challe…
AlGaAs/GeSn p-i-n diode interfaced with ultrathin AlO
Yang Liu, Yiran Li, Sudip Acharya +9
This study presents the fabrication and characterizations of an AlGaAs/GeSn/GeSn p-i-n double heterostructure (DHS) diode following the grafting a…
Structural and Electrical Properties of Grafted Si/GaAsSb Heterojunction
Haris Naeem Abbasi, Seunghyun Lee, Hyemin Jung +12
The short-wave infrared (SWIR) wavelength, especially 1.55 um, has attracted significant attention in various areas such as high-speed optical communication and LiDAR systems. Aval…
Demonstration of a monocrystalline GaAs--GaO p-n heterojunction
Jie Zhou, Moheb Sheikhi, Ashok Dheenan +14
In this work, we report the fabrication and characterizations of a monocrystalline GaAs/-GaO p-n heterojunction by employing semiconductor grafting technology. The heter…
Initial demonstration of AlGaAs-GaAsP-beta-Ga2O3 n-p-n double heterojunctions
Jie Zhou, Ashok Dheenan, Jiarui Gong +13
Beta phase gallium oxides, an ultrawide-bandgap semiconductor, has great potential for future power and RF electronics applications but faces challenges in bipolar device applicati…
Monocrystalline Si/-GaO p-n heterojunction diodes fabricated via grafting
Jiarui Gong, Donghyeok Kim, Hokyung Jang +19
The -GaO has exceptional electronic properties with vast potential in power and RF electronics. Despite the excellent demonstrations of high-performance unipolar devices…