Enhanced Performance of FeFET Gate Stack via Heterogeneously co-doped Ferroelectric HfO${}_2$ Films

Shouzhuo Yang, David Lehninger, Peter Reinig +5

In this work, we explore the impact of spatially controlled Zr and Al heterogeneous co-doping in HfO${}_2$ thin films tailored for metal-ferroelectric-insulator-semiconductor (MFIS)…