activity
19962020
most citedSwitching Distributions for Perpendicular Spin-Torque Devices within the Macrospin Approximation

181 citations · 419 across the 13 of their papers we have counts for

collaborators

13 papers

physics.app-ph2020★ 6 cited

Underlying magnetization responses of magnetic nanoparticles in assemblies

Mohammad Reza Zamani Kouhpanji, Pieter B Visscher, Bethanie J H Stadler

Magnetic nanoparticles (MNPs) have been proposed as an ultimate solution for diverse applications including nanomedicine and logic devices over decades. However, none has emerged r…

cond-mat.mtrl-sci2019

MFM and FORC+ study of switching mechanism in CoPd films

Joseph. B. Abugri, Billy D. Clark, P. B. Visscher +2

Recent research on CoPd alloys with perpendicular magnetic anisotropy (PMA) has suggested that they might be useful as the pinning layer in CoFeB/MgO-based perpendicular magnetic t…

cond-mat.mtrl-sci2018

Avoiding the anomaly using FORC+ (expanded version of paper GG-05, MMM-Intermag 2019)

P. B. Visscher

In conventional FORC (First Order Reversal Curve) analysis of a magnetic system, reversible and low-coercivity irreversible materials are treated as being qualitatively different:…

cond-mat.mtrl-sci2018★ 13 cited

FORC+ Analysis of Perpendicular Magnetic Tunnel Junctions

Joseph B. Abugri, P. B. Visscher, Subhadra Gupta +2

We have studied magnetic tunnel junction (MTJ) thin-film stacks using the First Order Reversal Curve (FORC) method. These have very sharp structures in the FORC distribution, unlik…

cond-mat.mtrl-sci2016★ 3 cited

FORC+: A method for separating reversible from irreversible behavior using first order reversal curves

P. B. Visscher

First Order Reversal Curves (FORCs) have been used for a number of years for the extraction of information from magnetization measurements. The results are most unambiguous for irr…

cond-mat.mtrl-sci2016★ 2 cited

Instability Mechanism for STT-MRAM switching

P. B. Visscher, Kamaram Munira, Robert J. Rosati

To optimize the design of STT-MRAM (spin-transfer torque magnetic random access memory), it is necessary to be able to predict switching (error) rates. For small elements, this can…