171 citations · 841 across the 24 of their papers we have counts for
5 papers · 1 filter
Modulating the growth conditions: Si as an acceptor in (110) GaAs for high mobility p-type heterostructures
F. Fischer, M. Grayson, D. Schuh +2
We implement metallic layers of Si-doped (110) GaAs as modulation doping in high mobility p-type heterostructures, changing to p-growth conditions for the doping layer alone. The s…
Activated Transport in the individual Layers that form the =1 Exciton Condensate
R. D. Wiersma, J. G. S. Lok, S. Kraus +6
We observe the total filling factor =1 quantum Hall state in a bilayer two-dimensional electron system with virtually no tunnelling. We find thermally activated transport in…
Observation of single defect relaxation in a freely suspended nano resonator
Florian W. Beil, Robert H. Blick, Achim Wixforth +3
Relaxation of single defects in a nanometer sized resonator is observed by coupling surface acoustic waves to a freely suspended beam. The surface waves act on the resonator as dri…
A new method to epitaxially grow long-range ordered self-assembled InAs quantum dots on (110) GaAs
J. Bauer, D. Schuh, E. Uccelli +5
We report on a new approach for positioning of self-assembled InAs quantum dots on (110) GaAs with nanometer precision. By combining self-assembly of quantum dots with molecular be…
Spin relaxation times of 2D holes from spin sensitive bleaching of inter-subband absorption
Petra Schneider, J. Kainz, S. D. Ganichev +9
We present spin relaxation times of 2D holes obtained by means of spin sensitive bleaching of the absorption of infrared radiation in p-type GaAs/AlGaAs quantum wells (QWs). It is…