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David Esseni

4 papers here

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • first author1
  • last author3

Across the 4 of 4 papers where every author was matched, so the position is known.

fields
  • cs.ET2
  • cond-mat.mtrl-sci1
  • physics.app-ph1
ORCID 0000-0002-3468-5197
same name
  • David Esseni — 1 paper, h 2

Either other researchers who publish under this name, or the same person where the external sources have not merged their records.

identity via Semantic Scholar / OpenAlex

most citedCharge-Trapping-Induced Compensation of the Ferroelectric Polarization in FTJs: Optimal Conditions for a Synaptic Device Operation

22 citations · 41 across the 4 of their papers we have counts for

collaborators
Showing cs.ETShow all

2 papers · 1 filter

cs.ET2023

Modelling and Simulations of Ferroelectric Materials and Ferroelectric-Based Nanoelectronic Devices

David Esseni, Francesco Driussi, Daniel Lizzit +2

This paper provides a brief introduction to the phenomenological aspects of the polarization in ferrroelectric materials, and then an analysis of a few selected topics related to t…

cs.ET2023★ 6 cited

Multi-level Operation of FeFETs Memristors: the Crucial Role of Three Dimensional Effects

Daniel Lizzit, Thomas Bernardi, David Esseni

This paper investigates and compares through a comprehensive TCAD analysis 2D and 3D simulations for ferroelectric based FETs. We provide clear evidence that the multiple read cond…

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Not affiliated with arXiv. Researcher data from Semantic Scholar (ODC-BY) and OpenAlex.