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cond-mat.mes-hall2007
(In,Ga)As gated-vertical quantum dot with an Al2O3 insulator
Tomohiro Kita, Daichi Chiba, Yuzo Ohno +1
We fabricated a gated-vertical (In,Ga)As quantum dot with an Al2O3 gate insulator deposited using atomic layer deposition and investigated its electrical transport properties at lo…
cond-mat.mes-hall2004★ 40 cited
Modulation of Noise in Submicron GaAs/AlGaAs Hall Devices by Gating
Yongqing Li, Cong Ren, Peng Xiong +3
We present a systematic characterization of fluctuations in submicron Hall devices based on GaAs/AlGaAs two-dimensional electron gas heterostructures at temperatures between 1.5 K…