1 citations · 1 across the 3 of their papers we have counts for
3 papers
Distributed Bragg reflector-mediated excitation of InAs/InP quantum dots emitting in the telecom C-band
A. Musiał, M. Wasiluk, M. Gawełczyk +4
We demonstrate that optical excitation of InAs quantum dots (QDs) embedded directly in an InP matrix can be mediated via states in a quaternary compound constituting an InP/InGaAlA…
Effects of dislocation filtering layers on optical properties of third telecom window emitting InAs/InGaAlAs quantum dots grown on silicon substrates
Wojciech Rudno-Rudziński, Michał Gawełczyk, Paweł Podemski +6
Integrating light emitters based on III-V materials with silicon-based electronics is crucial for further increase in data transfer rates in communication systems since the indirec…
Optical characteristics of cavity structures with Al0.2Ga0.8As/Al0.9Ga0.1As distributed Bragg reflectors and In0.37Ga0.63As quantum dots as the active region
Bartosz Kamiński, Agata Zielińska, Anna Musiał +5
We characterized optically In0.37Ga0.63As/GaAs quantum dots and Al0.2Ga0.8As/Al0.9Ga0.1As distributed Bragg reflector based cavities. The main mechanisms of quantum dots photolumin…