743 citations · 1.9k across the 27 of their papers we have counts for
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Magnetoresistivity in the Antiferromagnetic Hubbard Model
Joel Bobadilla, Marcelo J. Rozenberg, Alberto Camjayi
We investigate the magnetotransport properties of the half-filled antiferromagnetic (AF) one-band Hubbard model under an external magnetic field using the single-site dynamical mea…
Charge gain via solid-state gating of an oxide Mott system
Lishai Shoham, Itai Silber, Gal Tuvia +10
The modulation of channel conductance in field-effect transistors (FETs) via metal-oxide-semiconductor (MOS) structures has revolutionized information processing and storage. Howev…
Quantum interference effects of out-of-plane confinement on two-dimensional electron systems in oxides
A. F. Santander-Syro, J. Dai, T. C. Rödel +4
It was recently discovered that a conductive, metallic state is formed on the surface of some insulating oxides. Firstly observed on SrTiO(001), it was then found in other comp…
Multiple crossovers and coherent states in a Mott-Peierls insulator
O. Nájera, M. Civelli, V. Dobrosavljević +1
We consider the dimer Hubbard model within Dynamical Mean Field Theory to study the interplay and competition between Mott and Peierls physics. We describe the various metal-insula…
Bad-metal behavior reveals Mott quantum criticality in doped Hubbard models
J. Vucicevic, D. Tanaskovic, M. Rozenberg +1
Bad-Metal (BM) behavior featuring linear temperature dependence of the resistivity extending to well above the Mott-Ioffe-Regel (MIR) limit is often viewed as one of the key unreso…
Localised Wannier orbital basis for the Mott insulators GaV4S8 and GaTa4Se8
A. Camjayi, R. Weht, M. J. Rozenberg
We study the electronic properties of GaV4S8 (GVS) and GaTaSe8 (GTS), two distant members within the large family of chalcogenides AM4X8, with A={Ga, Ge}, M={V, Nb, Ta, Mo} and X={…
Non thermal and purely electronic resistive transition in narrow gap Mott insulators
P. Stoliar, M. Rozenberg, E. Janod +3
Mott insulator to metal transitions under electric field are currently the subject of numerous fundamental and applied studies. This puzzling effect, which involves non-trivial out…
Orbital selective crossover and Mott transitions in an asymmetric Hubbard model of cold atoms in optical lattices
E. A. Winograd, R. Chitra, M. J. Rozenberg
We study the asymmetric Hubbard model at half-filling as a generic model to describe the physics of two species of repulsively interacting fermionic cold atoms in optical lattices.…
A path to poor coherence in heavy fermions from Mott physics and hybridization
A. Amaricci, L. de Medici, G. Sordi +2
We investigate the anomalous metal arising by hole doping the Mott insulating state of the periodic Anderson model. Using Dynamical Mean-Field Theory we show that, as opposed to th…
Dynamical mean field theory of an effective three-band model for NaCoO
A. Bourgeois, A. A. Aligia, M. J Rozenberg
We derive an effective Hamiltonian for highly correlated states centered at the Co sites of NaCoO. The essential ingredients of the model are an O mediated hopping…
Mottness scenario for non-Fermi liquid behavior in the periodic Anderson model within Dynamical Mean Field Theory
A. Amaricci, G. Sordi, M. J. Rozenberg
We study the Mott metal-insulator transition in the Periodic Anderson Model within Dynamical Mean Field Theory (DMFT). Near the quantum transition, we find a non-Fermi liquid metal…
Mott transition in the Hubbard model away from particle-hole symmetry
D. J. Garcia, E. Miranda, K. Hallberg +1
We solve the Dynamical Mean Field Theory equations for the Hubbard model away from the particle-hole symmetric case using the Density Matrix Renormalization Group method. We focus…
Strong electron correlation effects in non-volatile electronic memory devices
Marcelo J. Rozenberg, Isao H. Inoue, Maria Jose Sanchez
We investigate hysteresis effects in a model for non-volatile memory devices. Two mechanisms are found to produce hysteresis effects qualitatively similar to those often experiment…
Melting transition of an Ising glass driven by magnetic field
L. Arrachea, D. Dalidovich, V. Dobrosavljević +1
The quantum critical behavior of the Ising glass in a magnetic field is investigated. We focus on the spin glass to paramagnet transition of the transverse degrees of freedom in th…
The infinite-range quantum random Heisenberg magnet
L. Arrachea, M. J. Rozenberg
We study with exact diagonalization techniques the Heisenberg model for a system of SU(2) spins with S=1/2 and random infinite-range exchange interactions. We calculate the critica…
Electronic structure of CaSrVO: a tale of two energy-scales
K. Maiti, D. D. Sarma, M. J. Rozenberg +5
We investigate the electronic structure of CaSrVO using photoemission spectroscopy. Core level spectra establish an electronic phase separation at the surface, lead…
Landau Theory of the Finite Temperature Mott Transition
G. Kotliar, E. Lange, M. J. Rozenberg
In the context of the dynamical mean-field theory of the Hubbard model, we identify microscopically an order parameter for the finite temperature Mott endpoint. We derive a Landau…
Band-width control in a perovskite-type 3d^1 correlated metal Ca_1-xSr_xVO_3. II. Optical spectroscopy investigation
H. Makino, I. H. Inoue, M. J. Rozenberg +3
Optical conductivity spectra of single crystals of Ca_1-xSr_xVO_3 have been studied to elucidate how the electronic behavior depends on the strength of the electron correlation wit…