activity
20212024
most citedLight-induced emergent phenomena in 2D materials and topological materials

306 citations · 711 across the 11 of their papers we have counts for

collaborators

11 papers

cond-mat.mes-hall202411 cited

Observation of dichotomic field-tunable electronic structure in twisted monolayer-bilayer graphene

Hongyun Zhang, Qian Li, Youngju Park +18

Twisted bilayer graphene (tBLG) provides a fascinating platform for engineering flat bands and inducing correlated phenomena. By designing the stacking architecture of graphene lay…

cond-mat.mes-hall20247 cited

Hidden charge density wave induced shadow bands and ultrafast dynamics of CuTe investigated using time-resolved ARPES

Haoyuan Zhong, Changhua Bao, Tianyun Lin +4

Revealing the fine electronic structure is critical for understanding the underlying physics of low-dimensional materials. Angle-resolved photoemission spectroscopy (ARPES) is a po…

cond-mat.mes-hall2024

Evolution of flat band and role of lattice relaxations in twisted bilayer graphene

Qian Li, Hongyun Zhang, Yijie Wang +15

Magic-angle twisted bilayer graphene (MATBG) exhibits correlated phenomena such as superconductivity and Mott insulating state related to the weakly dispersing flat band near the F…

cond-mat.mes-hall202356 cited

Floquet engineering of black phosphorus upon below-gap pumping

Shaohua Zhou, Changhua Bao, Benshu Fan +6

Time-periodic light field can dress the electronic states and lead to light-induced emergent properties in quantum materials. While below-gap pumping is regarded favorable for Floq…

cond-mat.mtrl-sci202340 cited

Ionic liquid gating induced self-intercalation of transition metal chalcogenides

Fei Wang, Yang Zhang, Zhijie Wang +6

Ionic liquids provide versatile pathways for controlling the structures and properties of quantum materials. Previous studies have reported electrostatic gating of nanometre-thick…

cond-mat.mes-hall20237 cited

Distinguishing and controlling Mottness in 1T-TaS by ultrafast light

Changhua Bao, Haoyuan Zhong, Fei Wang +5

Distinguishing and controlling the extent of Mottness is important for materials where the energy scales of the onsite Coulomb repulsion U and the bandwidth W are comparable. Here…