Towards Improved Polarization Uniformity in Ferroelectric Hf${}_{0.5}$Zr${}_{0.5}$O${}_2$ Devices within Back End of Line Thermal Budget for Memory and Neuromorphic Applications

Padma Srivari, Ella Paasio, Xinye Li +1

Thin film ferroelectric devices with ultralow power operation, non-volatile data retention and fast and reliable switching are attractive for non-volatile memory and as synaptic we…