11 citations · 12 across the 8 of their papers we have counts for
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Vanadium doped beta-Ga2O3 single crystals: Growth, Optical and Terahertz characterization
Maneesha Narayanan, Ajinkya Punjal, Emroj Hossain +4
We report the growth of electrically-resistive vanadium-doped beta-Ga2O3 single crystals via the optical floating zone technique. By carefully controlling the growth parameters V-d…
Terahertz Optical Properties and Birefringence in Single Crystal Vanadium doped [100] \b{eta}-Ga2O3
Ajinkya Punjal, Shraddha Choudhary, Maneesha Narayanan +4
We report the Terahertz optical properties of the Vanadium doped [100] \b{eta}-Ga2O3 using Terahertz Time-Domain Spectroscopy (THz-TDS). The V-doped \b{eta}-Ga2O3 crystal shows str…
Comparison of GaN nanowires grown on c-, r- and m-plane sapphire substrates
Carina B. Maliakkal, A. Azizur Rahman, Nirupam Hatui +3
Gallium nitride nanowires were grown on c-plane, r-plane and m-plane sapphire substrates in a showerhead metalorganic chemical vapor deposition system using nickel catalyst with tr…
Determination of InN-GaN heterostructure band offsets from internal photoemission measurements
Zahid Hasan Mahmood, A. P. Shah, Abdul Kadir +4
Band discontinuities at the InN-GaN heterointerface are experimentally determined from internal photoemission spectroscopy measurements on n+ InN on GaN epilayers. The photocurrent…
Influence of growth parameters on structural properties and bandgap of InN epilayers deposited in a showerhead MOVPE system
Abdul Kadir, Tapas Ganguli, Ravi Kumar +4
From a detailed analysis of InN epilayers deposited in a close-coupled showerhead metalorganic vapour phase epitaxy (MOVPE) system under various conditions we investigate the effec…