Jisung Park

most citedEmploying High-temperature-grown SrZrO

_{3}

Buffer to Enhance the Electron Mobility in La:BaSnO

_{3}

-based Heterostructures

7 citations · 7 across the 2 of their papers we have counts for

collaborators

2 papers

cond-mat.mtrl-sci2023★ 7 cited

Employing High-temperature-grown SrZrO $_{3}$ Buffer to Enhance the Electron Mobility in La:BaSnO $_{3}$ -based Heterostructures

Prosper Ngabonziza, Jisung Park, Wilfried Sigle +3

We report a synthetic route to achieve high electron mobility at room temperature in epitaxial La:BaSnO $_{3}$ /SrZrO $_{3}$ heterostructures prepared on several oxide substrates. Room-te…

cond-mat.mtrl-sci2021

Extending the kinetic and thermodynamic limits of molecular-beam epitaxy utilizing suboxide sources or metal-oxide catalyzed epitaxy

Patrick Vogt, Felix V. E. Hensling, Kathy Azizie +7

We observe a catalytic mechanism during the growth of III-O and IV-O materials by suboxide molecular-beam epitaxy ( $S$ -MBE). By supplying the molecular catalysts In $_{2}$ O and SnO we…

Employing High-temperature-grown SrZrO3​ Buffer to Enhance the Electron Mobility in La:BaSnO3​-based Heterostructures

Extending the kinetic and thermodynamic limits of molecular-beam epitaxy utilizing suboxide sources or metal-oxide catalyzed epitaxy

Employing High-temperature-grown SrZrO $_{3}$ Buffer to Enhance the Electron Mobility in La:BaSnO $_{3}$ -based Heterostructures