activity
20012019
most citedCarbon solubility and superconductivity in MgB2

121 citations · 309 across the 12 of their papers we have counts for

collaborators

12 papers

cond-mat.mtrl-sci2019★ 43 cited

Role of microstructure and structural disorder on tribological properties of polycrystalline diamond films

P. K. Ajikumar, K. Ganesan, N. Kumar +3

Polycrystalline diamond films with systematic change in microstructure that varies from microcrystalline to nanocrystalline structure are synthesized on Si by hot filament chemical…

cond-mat.mtrl-sci2009★ 40 cited

Phonon confinement and substitutional disorder in Cd1-xZnxS Nanocrystals

Satyaprakash Sahoo, S. Dhara, V. Sivasubramanian +2

1LO optical phonons in free-standing mixed Cd1-xZnxS nanocrystals, synthesized using chemical precipitation, are investigated using Raman spectroscopy. As expected for the nanocrys…

cond-mat.supr-con2009★ 1 cited

Synthesis, characterization and low temperature studies of iron chalcogenide superconductors

J. Janaki, T. Geetha Kumary, Awadhesh Mani +4

We have synthesized tetragonal iron selenide and telluride superconductors through solid state reaction at 450deg.C and 550deg.C respectively. These synthesis temperatures have bee…

cond-mat.mtrl-sci2007★ 50 cited

Multi-phonon Raman scattering in GaN nanowires

S. Dhara, Sharat Chandra, G. Mangamma +9

UV Raman scattering studies show longitudinal optical (LO) mode up to 4th order in wurtzite GaN nanowire system. Frohlich interaction of electron with the long range electrostatic…

cond-mat.mtrl-sci2007★ 6 cited

Nitrogen ion beam synthesis of InN in InP (100) at elevated temperature

S. Dhara, P. Magudapathy, R. Kesavamoorthy +8

InN phase is grown in crystalline InP(100) substrates by 50 keV N+ implantation at an elevated temperature of 400 deg C followed by annealing at 525 deg C in N2 ambient. Crystallog…

cond-mat.mtrl-sci2007★ 14 cited

Optical characterization of GaN by N+ implantation into GaAs at elevated temperature

S. Dhara, P. Magudapathy, R. Kesavamoorthy +7

Both hexagonal wurtzite and cubic zinc blend GaN phases were synthesized in GaAs by 50 keV N+ implantation at 400 deg C and subsequent annealing at 900 deg C for 15 min in N2 ambie…