62 citations · 181 across the 16 of their papers we have counts for
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physics.app-ph2022
Shape relaxation of epitaxial mesa for finite-size strain-engineering
Kennet D. R. Hannikainen, Luc Favre, Fabien Deprat +3
Silicon-Germanium (SiGe) layers are commonly used as stressors in the gate of MOSFET devices. They are expected to introduce a beneficial stress in the drift and channe…
cond-mat.mtrl-sci2022
Van der Waals heteroepitaxy of air stable quasi-free standing silicene layers on CVD epitaxial graphene/6H-SiC
Zouhour Ben Jabra, Mathieu Abel, Filippo Fabbri +8
Graphene, consisting of an inert, thermally stable material with an atomically flat, dangling bond-free surface is by essence an ideal template layer for van der Waals heteroepitax…