6 papers
Over One Order of Magnitude Enhancement in Hole Mobility of 2D III-V Semiconductors through Valence Band Edge Shift
Jianshi Sun, Shouhang Li, Cheng Shao +6
Two-dimensional (2D) semiconductors show great potential to sustain Moore's law in the era of ultra-scaled electronics. However, their scalable applications are severely constraine…
Unlocking high hole mobility in diamond over a wide temperature range via efficient shear strain
Jianshi Sun, Shouhang Li, Cheng Shao +9
As a wide bandgap semiconductor, diamond holds both excellent electrical and thermal properties, making it highly promising in the electrical industry. However, its hole mobility i…
Giant enhancement of hole mobility for 4H-silicon carbide through suppressing interband electron-phonon scattering
Jianshi Sun, Shouhang Li, Zhen Tong +8
4H-Silicon Carbide (4H-SiC) possesses a high Baliga figure of merit, making it a promising material for power electronics. However, its applications are limited by its low hole mob…
Diverse Responses in Lattice Thermal Conductivity of -type/-type Semiconductors Driven by Asymmetric Electron-Phonon Interactions
Jianshi Sun, Shouhang Li, Zhen Tong +8
Accurately assessing the impact of electron-phonon interaction (EPI) on the lattice thermal conductivity of semiconductors is crucial for the thermal management of electronic devic…
Weak effects of electron-phonon interactions on the lattice thermal conductivity of wurtzite GaN with high electron concentrations
Jianshi Sun, Shouhang Li, Zhen Tong +6
Wurtzite gallium nitride (GaN) has great potential for high-frequency and high-power applications due to its excellent electrical and thermal transport properties. However, enhanci…
Revisiting phonon thermal transport in two-dimensional gallium nitride: higher-order phonon-phonon and phonon-electron scattering
Jianshi Sun, Xiangjun Liu, Yucheng Xiong +4
Two-dimensional gallium nitride (2D-GaN) has great potential in power electronics and optoelectronics. Heat dissipation is a critical issue for these applications of 2D-GaN. Previo…