3 papers
cond-mat.mtrl-sci2025
Over One Order of Magnitude Enhancement in Hole Mobility of 2D III-V Semiconductors through Valence Band Edge Shift
Jianshi Sun, Shouhang Li, Cheng Shao +6
Two-dimensional (2D) semiconductors show great potential to sustain Moore's law in the era of ultra-scaled electronics. However, their scalable applications are severely constraine…
cond-mat.mtrl-sci2024
Unlocking high hole mobility in diamond over a wide temperature range via efficient shear strain
Jianshi Sun, Shouhang Li, Cheng Shao +9
As a wide bandgap semiconductor, diamond holds both excellent electrical and thermal properties, making it highly promising in the electrical industry. However, its hole mobility i…
cond-mat.mtrl-sci2024
Giant enhancement of hole mobility for 4H-silicon carbide through suppressing interband electron-phonon scattering
Jianshi Sun, Shouhang Li, Zhen Tong +8
4H-Silicon Carbide (4H-SiC) possesses a high Baliga figure of merit, making it a promising material for power electronics. However, its applications are limited by its low hole mob…