38 citations · 220 across the 31 of their papers we have counts for
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The Effect of Dipole Boron Centers on the Electroluminescence of Nanoscale Silicon p+-n Junctions
Nikolay Bagraev, Leonid Klyachkin, Roman Kuzmin +2
Nanoscale silicon p(+)-n junctions with very high concentration of boron, 5 10^21 cm-3, are found to demonstrate interesting optical properties. Emission band dominated in near-inf…
Electrically-Detected ESR in Silicon Nanostructures Inserted in Microcavities
Nikolay Bagraev, Eduard Danilovskii, Wolfgang Gehlhoff +7
We present the first findings of the new electrically-detected electron spin resonance technique (EDESR), which reveal the point defects in the ultra-narrow silicon quantum wells (…
Negative-U Centers as a Basis of Topological Edge Channels
Nikolay Bagraev, Eduard Danilovskii, Wolfgang Gehlhoff +4
We present the findings of the studies of the silicon sandwich nanostructure that represents the high mobility ultra - narrow silicon quantum well of the p - type (Si - QW), 2 nm,…
N-VSi-related center in non-irradiated 6H SiC nanostructure
Nikolay Bagraev, Eduard Danilovskii, Dmitrii Gets +5
We present the first findings of the vacancy-related centers identified by the electron spin resonance (ESR) and electrically-detected (ED) ESR method in the non-irradiated 6H-SiC…