activity
20042013
most citedPhase and amplitude response of "0.7 feature" caused by holes in silicon one-dimensional wires and rings

38 citations · 90 across the 11 of their papers we have counts for

collaborators

11 papers

cond-mat.mes-hall2013

Electrically-Detected ESR in Silicon Nanostructures Inserted in Microcavities

Nikolay Bagraev, Eduard Danilovskii, Wolfgang Gehlhoff +7

We present the first findings of the new electrically-detected electron spin resonance technique (EDESR), which reveal the point defects in the ultra-narrow silicon quantum wells (…

cond-mat.mes-hall2013

Negative-U Centers as a Basis of Topological Edge Channels

Nikolay Bagraev, Eduard Danilovskii, Wolfgang Gehlhoff +4

We present the findings of the studies of the silicon sandwich nanostructure that represents the high mobility ultra - narrow silicon quantum well of the p - type (Si - QW), 2 nm,…

cond-mat.mes-hall2008★ 38 cited

Phase and amplitude response of "0.7 feature" caused by holes in silicon one-dimensional wires and rings

N. T. Bagraev, N. G. Galkin, W. Gehlhoff +2

We present the findings of the 0.7(2e2/h) feature in the hole quantum conductance staircase that is caused by silicon one-dimensional channels prepared by the split-gate method ins…

cond-mat.mes-hall2006

Fractional form of the 0.7(2e2/h) feature

N. T. Bagraev, N. G. Galkin, W. Gehlhoff +3

We present the first findings of the spin transistor effect in the Rashba gate-controlled ring embedded in the p-type self-assembled silicon quantum well that is prepared on the n-…

cond-mat.mes-hall2006

ODMR Of Impurity Centers Embedded In Silicon Microcavities

N. T. Bagraev, W. Gehlhoff, L. E. Klyachkin +4

We present the findings of high efficient light absorption in self-assembled quantum wells (SQW) embedded in silicon microcavities that exhibit a distributed feedback identified by…

cond-mat.mes-hall2006

Spin-dependent transport in the p-type ultra-narrow silicon quantum well

N. T. Bagraev, M. I. Bovt, W. Gehlhoff +6

We present the findings of the spin-dependent transport of the 2D holes in the p-type ultra-narrow self-assembled silicon quantum well (Si-QW) confined by the superconductor barrie…