38 citations · 132 across the 12 of their papers we have counts for
12 papers
High Temperature Quantum Kinetic Effect in Silicon Nanosandwiches
N. T. Bagraev, V. Yu. Grigoryev, L. E. Klyachkin +4
The negative-U impurity stripes confining the edge channels of semiconductor quantum wells are shown to allow the effective cooling inside in the process of the spin-dependent tran…
Conductance matrix of multi terminal semiconductor devices with edge channels
E. Yu. Danilovskii, N. T. Bagraev
This paper presents a method for determining the conductance matrix of multi terminal semiconductor structures with edge channels. This method appears to be applied within framewor…
Circularly polarized electroluminescence from silicon nanostructures heavily doped with boron
N. T. Bagraev, L. E. Klyachkin, R. V. Kuzmin +1
The circularly polarized electroluminescence (CPEL) from silicon nanostructures which are the p-type ultra-narrow silicon quantum well (Si-QW) confined by δ-barriers heavily doped…
EDEPR of impurity centers embedded in silicon microcavities
N. T. Bagraev, W. Gehlhoff, D. S. Gets +5
We present the first findings of the new electrically-detected EPR (EDEPR) technique which reveal different shallow and deep centers without using the external cavity as well as th…
Phase and amplitude response of "0.7 feature" caused by holes in silicon one-dimensional wires and rings
N. T. Bagraev, N. G. Galkin, W. Gehlhoff +2
We present the findings of the 0.7(2e2/h) feature in the hole quantum conductance staircase that is caused by silicon one-dimensional channels prepared by the split-gate method ins…
Fractional form of the 0.7(2e2/h) feature
N. T. Bagraev, N. G. Galkin, W. Gehlhoff +3
We present the first findings of the spin transistor effect in the Rashba gate-controlled ring embedded in the p-type self-assembled silicon quantum well that is prepared on the n-…