2 papers
physics.optics2025
Nanoscale positioning and in-situ enhancement of single G center in silicon using a fluorescence-localization technique
Yu-Hang Ma, Nai-Jie Guo, Wei Liu +12
Silicon-based semiconductor nanofabrication technology has achieved a remarkable level of sophistication and maturity, and color centers in silicon naturally inherit this advantage…
quant-ph2025
Temperature dependent single- and double-quantum relaxation of negatively charged boron vacancies in hexagonal boron nitride
Lin-Ke Xie, Wei Liu, Kaiyu Huang +14
The negatively charged boron vacancy in two-dimensional hexagonal boron nitride has emerged as a promising candidate for quantum sensing. The coherence time of this defect spins wh…