most citedStrain engineering of Schottky barriers in single- and few-layer MoS2 vertical devices

66 citations · 66 across the 1 of their papers we have counts for

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1 paper

cond-mat.mes-hall2017★ 66 cited

Strain engineering of Schottky barriers in single- and few-layer MoS2 vertical devices

Jorge Quereda, Juan José Palacios, Nicolás Agräit +2

We study the effect of local strain in the electronic transport properties of vertical metal-atomically thin MoS2-metal structures. We use a conductive atomic force microscope tip…