49 citations · 76 across the 4 of their papers we have counts for
6 papers · 1 filter
Robust ferromagnetism in insulating LaNiMnO thin films
G. De Luca, J. Spring, U. Bashir +9
The field of oxide spintronics can strongly benefit from the establishment of robust ferromagnetic insulators with near room-temperature Curie temperature. Here we investigate the…
Monolithic thin-film chalcogenide-silicon tandem solar cells enabled by a diffusion barrier
Alireza Hajijafarassar, Filipe Martinho, Fredrik Stulen +12
Following the recent success of monolithically integrated Perovskite/Si tandem solar cells, great interest has been raised in searching for alternative wide bandgap top-cell materi…
Determination of conduction and valence band electronic structure of LaTiOxNy thin film
Markus Pichler, Jakub Szlachetko, Ivano E. Castelli +5
The nitrogen substitution into the oxygen sites of several oxide materials leads to a reduction of the band gap to the visible light energy range, which makes these oxynitride semi…
LaTiOxNy thin film model systems for photocatalytic water splitting: physicochemical evolution of the solid-liquid interface and the role of the crystallographic orientation
Markus Pichler, Wenping Si, Fatima Haydous +10
The size of the band gap and the energy position of the band edges make several oxynitride semiconductors promising candidates for efficient hydrogen and oxygen production under so…
Scavenging of oxygen vacancies at modulation-doped oxide interfaces: Evidence from oxygen isotope tracing
Y. Z. Chen, M. Döbeli, E. Pomjakushina +3
The introduction of manganite buffer layers, La7/8Sr1/8MnO3 (LSMO) in particular, at the metallic interface between SrTiO3 (STO) and another band insulator suppresses the carrier d…
A micrometer-thick oxide film with high thermoelectric performance at temperature ranging from 20-400 K
Jikun Chen, Hongyi Chen, Feng Hao +12
Thermoelectric (TE) materials achieve localised conversion between thermal and electric energies, and the conversion efficiency is determined by a figure of merit zT. Up to date, t…