2 papers
cond-mat.mes-hall2017
Built-in Homojunction Dominated Intrinsically Rectifying-Resistive Switching in NiO Nanodots for Selection Device-Free Memory Application
Zhong Sun, Linlin Wei, Ce Feng +5
The intrinsically rectifying-resistive switching (IR-RS) has been regarded as an effective way to address the crosstalk issue, due to the Schottky diodes formed at the metal/oxide…
cond-mat.mtrl-sci2017
Deterministic Role of Concentration Surplus of Cation Vacancy over Anion Vacancy in Bipolar Memristive NiO
Zhong Sun, Yonggang Zhao, Min He +9
Migration of oxygen vacancies has been proposed to play an important role in the bipolar memristive behaviors since oxygen vacancies can directly determine the local conductivity i…