216 citations · 229 across the 6 of their papers we have counts for
7 papers
Reflection of Electrons during Tunneling and an Intersubband Polaron in the 2D Electron System of a Delta-Layer in GaAs
S. E. Dizhur, I. N. Kotel'nikov, E. M. Dizhur
Al--GaAs structures are studied where tunneling to one or more subbands of the 2D electron system of a near-surface delta-doped layer is observed. Reflection of electrons at the…
Digital Processing in Tunneling Spectroscopy
E. M. Dizhur, A. V. Fedorov
An alternative approach to detect very weak singularities on the characteristics of a tunnel diode is proposed in which the numerical differential filtering is applied directly to…
Experimental Study of Pressure Influence on Tunnel Transport into 2DEG
E. M. Dizhur, A. N. Voronovsky, I. N. Kotel'nikov +2
We present the concept and the results of pilot measurements of tunneling in a system {Al/-GaAs} under pressure up to 2 GPa at 4.2 K. The obtained results may indicate the…
Reply to Comment on "Low-Density Spin Susceptibility and Effective Mass of Mobile Electrons in Si Inversion Layers"
V. M. Pudalov, M. Gershenson, H. Kojima +5
Reply to the Comment by S.V. Kravchenko, A.A. Shashkin, and V.T. Dolgopolov [cond-mat/0106056]
The low-density spin susceptibility and effective mass of mobile electrons in Si inversion layers
V. M. Pudalov, M. E. Gershenson, H. Kojima +5
We studied the Shubnikov-de Haas (SdH) oscillations in high-mobility Si-MOS samples over a wide range of carrier densities cm, which includes…
Pressure Dependence of the Barrier Height in Tunnel n-GaAs/Au Junctions
E. M. Dizhur, A. N. Voronovsky, A. Ya. Shul'man +1
The theory of tunnel current-voltage (I-V) characteristics of metal-semiconductor junctions based on the self-consistent solution of Poisson equation allows to get the Schottky-bar…