activity
20172022
most citedNonlinear domain wall velocity in ferroelectric Si-doped HfO thin film capacitors

20 citations · 62 across the 5 of their papers we have counts for

collaborators
Showing cond-mat.mtrl-sciShow all

4 papers · 1 filter

cond-mat.mtrl-sci202215 cited

Reversibly controlled ternary polar states and ferroelectric bias promoted by boosting square-tensile-strain

Jun Han Lee, Nguyen Xuan Duong, Min-Hyoung Jung +23

Interaction between dipoles often emerges intriguing physical phenomena, such as exchange bias in the magnetic heterostructures and magnetoelectric effect in multiferroics, which l…

cond-mat.mtrl-sci20178 cited

Electronic Reconstruction Enhanced Tunneling Conductance at Terrace Edges of Ultrathin Oxide Films

Lingfei Wang, Rokyeon Kim, Yoonkoo Kim +10

Quantum mechanical tunneling of electrons across ultrathin insulating oxide barriers has been studied extensively for decades due to its great potential in electronic device applic…

cond-mat.mtrl-sci201718 cited

Oxygen Partial Pressure during Pulsed Laser Deposition: Deterministic Role on Thermodynamic Stability of Atomic Termination Sequence at SrRuO3/BaTiO3 Interface

Yeong Jae Shin, Lingfei Wang, Yoonkoo Kim +8

With recent trends on miniaturizing oxide-based devices, the need for atomic-scale control of surface/interface structures by pulsed laser deposition (PLD) has increased. In partic…

cond-mat.mtrl-sci20171 cited

Interface control of ferroelectricity in a SrRuO3/BaTiO3/SrRuO3 capacitor and its critical thickness

Yeong Jae Shin, Yoonkoo Kim, Sung-Jin Kang +12

The atomic-scale synthesis of artificial oxide heterostructures offers new opportunities to create novel states that do not occur in nature. The main challenge related to synthesiz…