most citedOvercoming the Fundamental Barrier Thickness Limits of Ferroelectric Tunnel Junctions through BaTiO3/SrTiO3 Composite Barriers

114 citations · 156 across the 4 of their papers we have counts for

collaborators

4 papers

cond-mat.mtrl-sci2017★ 8 cited

Electronic Reconstruction Enhanced Tunneling Conductance at Terrace Edges of Ultrathin Oxide Films

Lingfei Wang, Rokyeon Kim, Yoonkoo Kim +10

Quantum mechanical tunneling of electrons across ultrathin insulating oxide barriers has been studied extensively for decades due to its great potential in electronic device applic…

cond-mat.mtrl-sci2017★ 114 cited

Overcoming the Fundamental Barrier Thickness Limits of Ferroelectric Tunnel Junctions through BaTiO3/SrTiO3 Composite Barriers

Lingfei Wang, Myung Rae Cho, Yeong Jae Shin +5

Ferroelectric tunnel junctions (FTJs) have attracted increasing research interest as a promising candidate for non-volatile memories. Recently, significant enhancements of tunnelin…

cond-mat.mtrl-sci2017★ 1 cited

Interface control of ferroelectricity in a SrRuO3/BaTiO3/SrRuO3 capacitor and its critical thickness

Yeong Jae Shin, Yoonkoo Kim, Sung-Jin Kang +12

The atomic-scale synthesis of artificial oxide heterostructures offers new opportunities to create novel states that do not occur in nature. The main challenge related to synthesiz…

cond-mat.mtrl-sci2014★ 33 cited

Transferring MBE-grown topological insulator films to arbitrary substrates and Metal-insulator transition via Dirac gap

Namrata Bansal, Myung Rae Cho, Matthew Brahlek +6

Mechanical exfoliation of bulk crystals has been widely used to obtain thin topological insulator (TI) flakes for device fabrication. However, such a process produces only micro-si…