activity
20142023
most citedExciton Binding Energy and Nonhydrogenic Rydberg Series in Monolayer WS2

2.6k citations · 4.4k across the 21 of their papers we have counts for

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Showing cond-mat.mes-hallShow all

12 papers · 1 filter

cond-mat.mes-hall2023

Variable Electrical Responses in Epitaxial Graphene Nanoribbons

C. -C. Yeh, S. M. Mhatre, N. T. M. Tran +7

We have demonstrated the fabrication of both armchair and zigzag epitaxial graphene nanoribbon (GNR) devices on 4H-SiC using a polymer-assisted sublimation growth method. The pheno…

cond-mat.mes-hall2023

Star-Mesh Quantized Hall Array Resistance Devices

Dean G. Jarrett, Ching-Chen Yeh, Shamith U. Payagala +10

Advances in the development of graphene-based technology have enabled improvements in DC resistance metrology. Devices made from epitaxially grown graphene have replaced the GaAs-b…

cond-mat.mes-hall2022

Fabrication of uniformly doped graphene quantum Hall arrays with multiple quantized resistance outputs

Swapnil M. Mhatre, Ngoc Thanh Mai Tran, Heather M. Hill +7

In this work, limiting factors for developing metrologically useful arrays from epitaxial graphene on SiC are lifted with a combination of centimeter-scale, high-quality material g…

cond-mat.mes-hall2022

Spectroscopic assessment of short-term nitric acid doping of epitaxial graphene

Ngoc Thanh Mai Tran, Swapnil M. Mhatre, Cristiane N. Santos +10

This work reports information on the transience of hole doping in epitaxial graphene devices when nitric acid is used as an adsorbent. Under vacuum conditions, desorption processes…

cond-mat.mes-hall2022

Timescales for Nitric Acid Desorption in Epitaxial Graphene Devices

Swapnil M. Mhatre, Ngoc Thanh Mai Tran, Heather M. Hill +6

This work reports the dynamics of transient hole doping in epitaxial graphene devices by using nitric acid as an adsorbent. The timescales associated with corresponding desorption…

cond-mat.mes-hall2022

Large-scale five- and seven-junction epitaxial graphene devices

Dinesh Patel, Martina Marzano, Chieh-I Liu +8

The utilization of multiple current terminals on millimeter-scale graphene p-n junction devices has enabled the measurement of many atypical, fractional multiples of the quantized…

cond-mat.mes-hall2022

Algorithms for determining resistances in quantum Hall annuli with p-n junctions

Chieh-I Liu, Dominick S. Scaletta, Dinesh K. Patel +4

Just a few of the promising applications of graphene Corbino pnJ devices include two-dimensional Dirac fermion microscopes, custom programmable quantized resistors, and mesoscopic…

cond-mat.mes-hall2022

Quantum Hall Junction Dartboards Using Graphene Annuli

Chieh-I Liu, Dinesh K. Patel, Martina Marzano +3

The use of multiple current terminals on millimeter-scale graphene junction devices fabricated with Corbino geometries, or quantum Hall resistance dartboards, have enabled th…

cond-mat.mes-hall2022

Nonconventional Quantized Hall Resistances Obtained with Equilibration in Epitaxial Graphene Junctions

Albert F. Rigosi, Dinesh Patel, Martina Marzano +9

We have demonstrated the millimeter-scale fabrication of monolayer epitaxial graphene junction devices using simple ultraviolet photolithography, thereby significantly reduci…

cond-mat.mes-hall2022

Algorithm for constructing customized quantized resistances in graphene junctions

Albert F. Rigosi, Martina Marzano, Antonio Levy +6

An algorithm is introduced for predicting quantized resistances in graphene p-n junction devices that utilize more than a single entry and exit point for electron flow. Depending o…

cond-mat.mes-hall2017★ 1 cited

Coulomb engineering of the bandgap in 2D semiconductors

Archana Raja, Andrey Chaves, Jaeeun Yu +13

The ability to control the size of the electronic bandgap is an integral part of solid-state technology. Atomically-thin two-dimensional crystals offer a new approach for tuning th…

cond-mat.mes-hall2014★ 521 cited

Valley Splitting and Polarization by the Zeeman Effect in Monolayer MoSe2

Yilei Li, Jonathan Ludwig, Tony Low +12

We have measured circularly polarized photoluminescence in monolayer MoSe2 under perpendicular magnetic fields up to 10 T. At low doping densities, the neutral and charged excitons…