43 citations · 43 across the 2 of their papers we have counts for
2 papers
cond-mat.mtrl-sci2023
Molecular beam epitaxy of GaN/AlGaN quantum wells on bulk GaN substrate in the step-flow or step meandering regime: influence on indirect exciton diffusion
Benjamin Damilano, Rémi Aristégui, Henryk Teisseyre +8
GaN/AlxGa1-xN quantum wells were grown by molecular beam epitaxy on high quality bulk (0001) GaN substrates. The quantum well thickness was set in the 6-8 nm range to favor the pho…
cond-mat.mtrl-sci2017★ 43 cited
Millimeter-scale layered MoSe2 grown on sapphire and evidence for negative magnetoresistance
M. T. Dau, C. Vergnaud, A. Marty +10
Molecular beam epitaxy technique has been used to deposit a single layer and a bilayer of MoSe 2 on sapphire. Extensive characterizations including in-situ and ex-situ measurements…