Compact Modeling of MOSFET I-V Characteristics and Simulation of Dose-Dependent Drain Currents

G. I. Zebrev, V. V. Orlov, A. S. Bakerenkov +1

We have presented a compact MOSFET model, which allows us to describe the I-V characteristics of irradiated long-channel and short-channel transistors in all operation modes at dif…