activity
20142026
most citedFlexible transparent high-voltage diodes for energy management in wearable electronics

51 citations · 134 across the 6 of their papers we have counts for

collaborators

6 papers

physics.app-ph2026

Giant intrinsic dichroism in \b{eta}-Ga2O3 enables filter-free, high-fidelity polarization division multiplexing

Yonghui Zhang, Rui Zhu, Huili Liang +4

Conventional polarization detection relies on external filters, which incur significant efficiency loss and polarization crosstalk, especially in the deep ultraviolet band where su…

cond-mat.str-el2023★ 28 cited

Topological Hall Effect Driven by Short-Range Magnetic Orders in EuZnAs

Enkui Yi, Dong Feng Zheng, Feihao Pan +11

Short-range (SR) magnetic orders such as magnetic glass orders or fluctuations in a quantum system usually host exotic states or critical behaviors. As the long-range (LR) magnetic…

physics.app-ph2020

Epitaxial Growth of -GaO Coated Wide Bandgap Semiconductor Tape for Flexible UV Photodetector

Xiao Tang, Kuang-Hui Li, Yue Zhao +7

The epitaxial growth of technically-important -GaO semiconductor thin films have not been realized on flexible substrates due to limitations by the high-temperature crys…

physics.app-ph2017★ 51 cited

Flexible transparent high-voltage diodes for energy management in wearable electronics

Yonghui Zhang, Zengxia Mei, Tao Wang +4

This work reports flexible fully transparent high-voltage diodes that feature high rectification ratio (Rr 10 8) and high breakdown voltage (Vb 150 V) simultaneously, combined with…

cond-mat.mtrl-sci2017★ 33 cited

Flexible Transparent Field-Effect Diodes Fabricated at Low-Temperature with All Oxide Materials

Yonghui Zhang, Zengxia Mei, Shujuan Cui +3

Flexible fully transparent diodes with high rectification ratio of 5 e 8 are fabricated with all oxide materials at low temperature. The devices are optically transparent in visibl…

cond-mat.mtrl-sci2014★ 22 cited

Fluorine doping: A feasible solution to enhancing the conductivity of high-resistance wide bandgap Mg0.51Zn0.49O active components

Lishu Liu, Zengxia Mei, Yaonan Hou +5

N-type doping of high-resistance wide bandgap semiconductors, wurtzite high-Mg-content MgxZn1-xO for instance, has always been a fundamental application-motivated research issue. H…