most citedHigh Curie temperature Mn 5 Ge 3 thin films produced by non-diffusive reaction

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cond-mat.mtrl-sci2021

Hydrogen-mediated CVD epitaxy of Graphene on SiC: growth mechanism and atomic configuration

Zouhour Ben Jabra, Isabelle Berbezier, Adrien Michon +7

Despite the large literature focused on the growth of graphene (Gr) on 6H-SiC(0001) by chemical vapour deposition (CVD), some important issues have not been solved and full wafer s…