activity
20172021
most citedTuning band alignment at a semiconductor-crystalline oxide heterojunction via electrostatic modulation of the interfacial dipole

23 citations · 35 across the 7 of their papers we have counts for

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Showing cond-mat.mtrl-sciShow all

9 papers · 1 filter

cond-mat.mtrl-sci2021

Antisite defects stabilized by antiphase boundaries in YFeO thin films

Abinash Kumar, Konstantin Klyukin, Shuai Ning +7

YFeO thin films are a recent addition to the family of multiferroic orthoferrites where Y\textsubscript{Fe} antisite defects and strain have been shown to introduce polar displ…

cond-mat.mtrl-sci202123 cited

Tuning band alignment at a semiconductor-crystalline oxide heterojunction via electrostatic modulation of the interfacial dipole

M. Chrysler, J. Gabel, T. -L. Lee +14

We demonstrate that the interfacial dipole associated with bonding across the SrTiO3/Si heterojunction can be tuned through space charge, thereby enabling the band alignment to be…

cond-mat.mtrl-sci20215 cited

Making BaZrS3 chalcogenide perovskite thin films by molecular beam epitaxy

Ida Sadeghi, Kevin Ye, Michael Xu +2

We demonstrate the making of BaZrS3 thin films by molecular beam epitaxy (MBE). BaZrS3 forms in the orthorhombic distorted-perovskite structure with corner-sharing ZrS6 octahedra.…

cond-mat.mtrl-sci2021

An antisite defect mechanism for room temperature ferroelectricity in orthoferrites

Shuai Ning, Abinash Kumar, Konstantin Klyukin +6

Single-phase multiferroic materials that allow the coexistence of ferroelectric and magnetic ordering above room temperature are highly desirable, motivating an ongoing search for…

cond-mat.mtrl-sci20193 cited

Decoding the complexities of lead-based relaxor ferroelectrics

Abinash Kumar, Jonathon N. Baker, Preston C. Bowes +5

Relaxor ferroelectrics, which can exhibit exceptional electromechanical coupling are some of the most important functional materials with applications ranging from ultrasound imagi…

cond-mat.mtrl-sci2018

Charge transfer and tunable built-in electric fields across semiconductor-crystalline oxide interfaces

Zheng Hui Lim, Nicholas F. Quackenbush, Aubrey Penn +10

Built-in electric fields across heterojunctions between semiconducting materials underpin the functionality of modern device technologies. Heterojunctions between semiconductors an…